Hall-bar of a Heusler thin film connected to a standard puck to investigate the materials transport properties

Publications of Haijing Zhang

Journal Article (4)

Journal Article
Zhang, T.; Zhang, H.; Pan, J.; Sheng, P.: Theoretical and experimental investigation of the metal–insulator transition in disordered anti-dot graphene. New Journal of Physics 24 (11), 113027, pp. 1 - 9 (2022)
Journal Article
Baenitz, M.; Piva, M. M.; Luther, S.; Sichelschmidt, J.; Ranjith, K. M.; Dawczak-Dȩbicki, H.; Ajeesh, M. O.; Kim, S.; Siemann, G.; Bigi, C. et al.; Manuel, P.; Khalyavin, D.; Sokolov, D. A.; Mokhtari, P.; Zhang, H.; Yasuoka, H.; King, P. D. C.; Vinai, G.; Polewczyk, V.; Torelli, P.; Wosnitza, J.; Burkhardt, U.; Schmidt, B.; Rosner, H.; Wirth, S.; Kühne, H.; Nicklas, M.; Schmidt, M.: Planar triangular S=3/2 magnet AgCrSe2: Magnetic frustration, short range correlations, and field-tuned anisotropic cycloidal magnetic order. Physical Review B 104 (13), 134410, pp. 1 - 16 (2021)
Journal Article
Berthod, C.; Zhang, H.; Morpurgo, A. F.; Giamarchi, T.: Theory of cross quantum capacitance. Physical Review Research 3 (4), 043036, pp. 1 - 22 (2021)
Journal Article
Pan, J.; Yeh, S.-S.; Zhang, H.; Rees, D. G.; Zhang, T.; Zhang, B.; Lin, J.-J.; Sheng, P.: Correlation hard gap in antidot graphene. Physical Review B 103 (23), 235114, pp. 1 - 8 (2021)
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