Topological Insulators

Band bending in Topological Insulator

Theoretical predictions in novel material, like topological insulators and Weyl semiconductors, are also investigated by HAXPES. In this example, HAXPES allows a direct measurement of the surface band bending in Bi2Se3. The existence of a band bending was predicted to be the origin of additional surface states, exhibiting considerable Rashba splitting, nested in the Dirac cone. The band bending was demonstrated by tracking the depth dependence of the core energy shift of the material [3].

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