Our second deposition system (Figure 1, sputter 2) hosts 13 magnetrons in total (4 x 3 inches; 9 x 2 inches) for DC and RF modes. As shown in Figure 2, the layout combined with an off-centred sample rotation allows us to use 10 of these magnetrons in planar geometry with a minimum substrate-to-target distance of 70 mm. Six of the 2-inch magnetrons can be tilted towards the larger 3-inch sources to form three independent clusters (Figure 2, clusters 1--3) of four guns each in confocal geometry. Therefore, simple buffer and capping layers can be deposited with a low distance in planar geometry and from the same target as used for composite films in confocal geometry. The reachable base pressure is <2 x 10-10mbar. Similar to the system presented above, samples can be heated to 1000°C during the deposition process. A linear shutter can cover parts of the sample or be driven slowly to form wedges.

Figure 2: (a) Magnetron layout of the UHV sputtering system for planar and co-deposition. Sources 3, 7, and 11 are dedicated for confocal deposition and sources 1, 2, 4, 5, 6, 8, 9, 10, and 12 for planer deposition. Because of a tilt option, sources 1, 4, 5, 8, 9, and 12 can be used variably in planar as well as in confocal geometry. (b) Overview of the system. (c) Magnetron configuration in planar geometry. The target-to-substrate distance can be varied between 50 and 140 mm for 2-inch sources and between 70  and 160 mm for 3-inch sources. (d) Confocal magnetron geometry. The target-to-substrate distances are 126 mm (3 inch) and 143 mm (2 inch). The angle of the 2-inch sources to the substrate normal is 35°.
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