Publications of Haijing Zhang

Fartab, D. S.; Guimarães, J.; Schmidt, M.; Zhang, H.: Highly tunable Rashba spin-orbit coupling and crossover from weak localization to weak antilocalization in ionic-gated tellurium. Physical Review B 108 (11), 115305, pp. 1 - 6 (2023)

Kim, S.-J.; Zhu, J.; Piva, M. M.; Schmidt, M.; Fartab, D.; Mackenzie, A. P.; Baenitz, M.; Nicklas, M.; Rosner, H.; Cook, A. M. et al.; González-Hernández, R.; Šmejkal, L.; Zhang, H.: Observation of the Anomalous Hall Effect in a Layered Polar Semiconductor. Advanced Science, 2307306, pp. 1 - 8 (2023)

Siemann, G.-R.; Kim, S.-J.; Abarca Morales, E.; Murgatroyd, P. A. E.; Zivanovic, A.; Edwards, B.; Marković, I.; Mazzola, F.; Trzaska, L.; Clark, O. J. et al.; Bigi, C.; Zhang, H.; Achinuq, B.; Hesjedal, T.; Watson, M. D.; Kim, T. K.; Bencok, P.; van der Laan, G.; Polley, C. M.; Leandersson, M.; Fedderwitz, H.; Ali, K.; Balasubramanian, T.; Schmidt, M.; Baenitz, M.; Rosner, H.; King, P. D. C.: Spin-orbit coupled spin-polarised hole gas at the CrSe₂-terminated surface of AgCrSe₂. npj Quantum Materials 8 (1), 61, pp. 1 - 7 (2023)

Zhang, T.; Zhang, H.; Pan, J.; Sheng, P.: Theoretical and experimental investigation of the metal–insulator transition in disordered anti-dot graphene. New Journal of Physics 24 (11), 113027, pp. 1 - 9 (2022)

Baenitz, M.; Piva, M. M.; Luther, S.; Sichelschmidt, J.; Ranjith, K. M.; Dawczak-Dȩbicki, H.; Ajeesh, M. O.; Kim, S.; Siemann, G.; Bigi, C. et al.; Manuel, P.; Khalyavin, D.; Sokolov, D. A.; Mokhtari, P.; Zhang, H.; Yasuoka, H.; King, P. D. C.; Vinai, G.; Polewczyk, V.; Torelli, P.; Wosnitza, J.; Burkhardt, U.; Schmidt, B.; Rosner, H.; Wirth, S.; Kühne, H.; Nicklas, M.; Schmidt, M.: Planar triangular S=3/2 magnet AgCrSe₂: Magnetic frustration, short range correlations, and field-tuned anisotropic cycloidal magnetic order. Physical Review B 104 (13), 134410, pp. 1 - 16 (2021)

Berthod, C.; Zhang, H.; Morpurgo, A. F.; Giamarchi, T.: Theory of cross quantum capacitance. Physical Review Research 3 (4), 043036, pp. 1 - 22 (2021)

Pan, J.; Yeh, S.-S.; Zhang, H.; Rees, D. G.; Zhang, T.; Zhang, B.; Lin, J.-J.; Sheng, P.: Correlation hard gap in antidot graphene. Physical Review B 103 (23), 235114, pp. 1 - 8 (2021)