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Luther, S.; Ranjith, K. M.; Doert, T.; Wosnitza, J.; Kühne, H.; Baenitz, M.: Anisotropic magnetism and spin fluctuations in the triangular-lattice spin-liquid candidate NaYbSe₂: A single-crystal ²³Na and ⁷⁷Se NMR study. Physical Review B 110, 214440, S. 1 - 8 (2024)

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Ma, H.; Zhou, J.; Zhao, Y.; Wang, S.; Hu, Z.; Ma, J.; Cheng, H.: Atomically Dispersed Mn-Doped Ru@RuO₂ Core/Shell Nanostructure with High Acidic Water Oxidation Performance Arising from Multiple Synergies. Small, 2406353, S. 1 - 8 (2024)

Mao, N.; Xu, C.; Li, J.; Bao, T.; Liu, P.; Xu, Y.; Felser, C.; Fu, L.; Zhang, Y.: Transfer learning relaxation, electronic structure and continuum model for twisted bilayer MoTe₂. Communications Physics 7, 262, S. 1 - 7 (2024)

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Meléndez-Sans, A.; Pereira, V. M.; Chang, C. F.; Kuo, C.-Y.; Chen, C. T.; Tjeng, L. H.; Altendorf, S. G.: Influence of nitrogen stoichiometry and the role of Sm 5d states in SmN thin films. Physical Review B 110 (4), 045120, S. 1 - 9 (2024)

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Milosavljević, D.; Rosner, H.; Johansson, A.: Electronic structure of noncentrosymmetric B20 compound HfSn and tuning of multifold band-crossing points. Physical Review Research 6 (3), 033157, S. 1 - 13 (2024)

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Nagarajan, S.; Ratschinski, I.; Schmult, S.; Wirth, S.; König, D.; Mikolajick, T.; Hiller, D.; Trommer, J.: Analyzing Carrier Density and Hall Mobility in Impurity-Free Silicon Virtually Doped by External Defect Placement. Advanced Functional Materials, 2415230 , S. 1 - 7 (2024)