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Zeitschriftenartikel (14)

  1. 1.
    Zeitschriftenartikel
    Gooth, J.; Borg, M.; Schmid, H.; Bologna, N.; Rossell, M. D.; Wirths, S.; Moselund, K.; Nielsch, K.; Riel, H.: Transition to the quantum hall regime in InAs nanowire cross-junctions. Semiconductor Science and Technology 34 (3), 035028, S. 1 - 9 (2019)
  2. 2.
    Zeitschriftenartikel
    Guin, S. N.; Manna, K.; Noky, J.; Watzman, S. J.; Fu, C.; Kumar, N.; Schnelle, W.; Shekhar, C.; Sun, Y.; Gooth, J. et al.; Felser, C.: Anomalous Nernst effect beyond the magnetization scaling relation in the ferromagnetic Heusler compound Co2MnGa. NPG Asia Materials 11, 16, S. 1 - 9 (2019)
  3. 3.
    Zeitschriftenartikel
    Guin, S. N.; Vir, P.; Zhang, Y.; Kumar, N.; Watzman, S.J.; Fu, C.; Liu, E.; Manna, K.; Schnelle, W.; Gooth, J. et al.; Shekhar, C.; Sun, Y.; Felser, C.: Zero-Field Nernst Effect in a Ferromagnetic Kagome-Lattice Weyl-Semimetal Co3Sn2S2. Advanced Materials, 1806622, S. 1 - 7 (2019)
  4. 4.
    Zeitschriftenartikel
    Kroder, J.; Gooth, J.; Schnelle, W.; Fecher, G. H.; Felser, C.: Observation of spin glass behavior in chiral Mn48Fe34Si18 with a β-Mn related structure. AIP Advances 9 (5), 055327, S. 1 - 5 (2019)
  5. 5.
    Zeitschriftenartikel
    Kroder, J.; Manna, K.; Kriegner, D.; Sukhanov, A. S.; Liu, E.; Borrmann, H.; Hoser, A.; Gooth, J.; Schnelle, W.; Inosov, D. S. et al.; Fecher, G. H.; Felser, C.: Spin glass behavior in the disordered half-Heusler compound IrMnGa. Physical Review B 99 (17), 174410, S. 1 - 10 (2019)
  6. 6.
    Zeitschriftenartikel
    Kumar, N.; Sun, Y.; Nicklas, M.; Watzman, S. J.; Young, O.; Leermakers, I.; Hornung, J.; Klotz, J.; Gooth, J.; Manna, K. et al.; Süß, V.; Guin, S. N.; Förster, T.; Schmidt, M.; Muechler, L.; Yan, B.; Werner, P.; Schnelle, W.; Zeitler, U.; Wosnitza, J.; Parkin, S. S. P.; Felser, C.; Shekhar, C.: Extremely high conductivity observed in the triple point topological metal MoP. Nature Communications 10, 2475, S. 1 - 7 (2019)
  7. 7.
    Zeitschriftenartikel
    Li, G.; Fu, C.; Wu, J.; Rao, J.; Liou, S.-C.; Xu, X.; Shao, B.; Liu, K.; Liu, E.; Kumar, N. et al.; Liu, X.; Fahlman, M.; Gooth, J.; Auffermann, G.; Sun, Y.; Felser, C.; Zhang, B.: Synergistically creating sulfur vacancies in semimetal-supported amorphous MoS2 for efficient hydrogen evolution. Applied Catalysis B 254, S. 1 - 6 (2019)
  8. 8.
    Zeitschriftenartikel
    Fu, C.; Guin, S. N.; Watzman, S. J.; Li, G.; Liu, E.; Kumar, N.; Süß, V.; Schnelle, W.; Auffermann, G.; Shekhar, C. et al.; Sun, Y.; Gooth, J.; Felser, C.: Large Nernst power factor over a broad temperature range in polycrystalline Weyl semimetal NbP. Energy & Environmental Science 11, S. 2813 - 2820 (2018)
  9. 9.
    Zeitschriftenartikel
    Gooth, J.; Menges, F.; Kumar, N.; Süß, V.; Shekhar, C.; Sun, Y.; Drechsler, U.; Zierold, R.; Felser, C.; Gotsmann, B.: Thermal and electrical signatures of a hydrodynamic electron fluid in tungsten diphosphide. Nature Communications 9 (1), 4093, S. 1 - 8 (2018)
  10. 10.
    Zeitschriftenartikel
    Jaoui, A.; Fauque, B.; Rischau, C. W.; Subedi, A.; Fu, C.; Gooth, J.; Kumar, N.; Süß, V.; Maslov, D. L.; Felser, C. et al.; Behnia, K.: Departure from the Wiedemann-Franz law in WP2 driven by mismatch in T-square resistivity prefactors. npj Quantum Materials 3, 64, S. 1 - 7 (2018)
  11. 11.
    Zeitschriftenartikel
    Manna, K.; Muechler, L.; Kao, T.-H.; Stinshoff, R.; Zhang, Y.; Gooth, J.; Kumar, N.; Kreiner, G.; Koepernik, K.; Car, R. et al.; Kübler, J.; Fecher, G. H.; Shekhar, C.; Sun, Y.; Felser, C.: From Colossal to Zero: Controlling the Anomalous Hall Effect in Magnetic Heusler Compounds via Berry Curvature Design. Physical Review X 8 (4), 041045, S. 1 - 10 (2018)
  12. 12.
    Zeitschriftenartikel
    Noky, J.; Gooth, J.; Felser, C.; Sun, Y.: Characterization of topological band structures away from the Fermi level by the anomalous Nernst effect. Physical Review B 98 (24), 241106, S. 1 - 5 (2018)
  13. 13.
    Zeitschriftenartikel
    Wirths, S.; Mayer, B. F.; Schmid, H.; Sousa, M.; Gooth, J.; Riel, H.; Moselund, K. E.: Room-Temperature Lasing from Monolithically Integrated GaAs Microdisks on Silicon. ACS Nano 12 (3), S. 2169 - 2175 (2018)
  14. 14.
    Zeitschriftenartikel
    Xin, J.; Li, G.; Auffermann, G.; Borrmann, H.; Schnelle, W.; Gooth, J.; Zhao, X.; Zhu, T.; Felser, C.; Fu, C.: Growth and transport properties of Mg3X2 (X = Sb, Bi) single crystals. Materials Today Physics 7, S. 61 - 68 (2018)
 
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